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4X10Gbps Φ70μm 250μm Die Pitch 1X4 Array GaAs PIN PD Chip

P/N: XSJ-10-G5-70-K4

This high data rate 4X10Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ70μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 10Gigabit Ethernet and Multi-mode communication etc.

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Description

Features

  1. Φ70μm active area.
  2. Low capacitance and low dark current.
  3. High responsibility.
  4. Data rate up to 10Gbps.
  5. Die pitch: 250μm
  6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
  7. 100% testing and inspection.

Applications

  1. 10Gbps AOC (Active Optical Cable) receiver at 850nm.
  2. Infiniband.
  3. SONET/SDH

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