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Email:ge_liu@phograin.com

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Tel: (+86) 181 8861 1183
Email: hu_xu@phograin.com

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No 7, Lorong Industri Sungai Lokan 2, Taman Industri Sungai Lokan, 13800 Butterworth, Penang, Malaysia

4x10Gbps Φ50μm 250μm Die Pitch 1x4 Array PIN PD Chip

P/N: XSJ-10-D5-50H-K4

The high-speed 4X10Gbps photodetector chip is an InGaAs/I InP PIN structure and front illuminated type, characterized by high responsiveness, low capacitance, and low dark current. The size of the photosensitive area is 50um, and the P and N pads are designed at the top for easy packaging of solder wires. Mainly paired with 4X10Gbps four channel TIA, it is used for long-distance, high-speed, and single-mode 4X10G bps optical receivers and data communication.

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Description

Features

  1. Φ50μm active area.
  2. Ground-Signal-Ground (GSG) bond pad structure, 4X10Gbps array.
  3. Low dark current, low capacitance, high responsibility.
  4. Die pitch: 250μm
  5. 100% testing and inspection.
  6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
  7. RoHS2.0 (2011/65/EU) compliant.

Applications

  1. 40Gbps QSFP+ LR4

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