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Tel: (+86) 181 8861 1190
Email:ge_liu@phograin.com

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Tel: (+86) 181 8861 1183
Email: hu_xu@phograin.com

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Tel: (+86) 516 8325 8257

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10Gbps Φ50μm Top-illuminated APD Chip

P/N: XSJ-10-APD5-50P-X

This 10G avalanche photodiode chip (APD chip) is a kind of P electrode on top and N electrode in bottom structure, with top-illuminated active area size is Φ50μm. This product features high multiplication, low capacitance, high bandwidth, low temperature coefficient and excellent reliability, application in 10G SONET/SDH and 10G PON optical receiver.

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Description

Features

  1. Φ50μm active area.
  2. High multiplication.
  3. Low temperature coefficient.
  4. 100% testing and inspection.
  5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
  6. RoHS2.0 (2011/65/EU) compliant.

Applications

  1. 10G SONET/SDH
  2. 10G PON

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