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25Gbps Φ38μm GaAs PIN PD Chip

P/N: XSJ-10-G6-38

This high data rate 25Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ38μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 25Gigabit Ethernet and Multi-mode communication etc.

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Description

Features

  1. Φ38μm active area.
  2. Low capacitance and low dark current.
  3. High responsibility.
  4. Data rate up to 25Gbps.
  5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
  6. 100% testing and inspection.

Applications

  1. 25Gigabit Ethernet/Fiber channel.
  2. 25Gbps AOC (Active Optical Cable) receiver at 850nm.
  3. 25Gbps VCSEL based parallel optical interconnects.
  4. 25Gbps SFP+.
  5. 4X25Gbps QSFP.

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