4x28Gbps Φ35μm 250μm Die Pitch 1x4 Array GaAs PIN PD Chip

P/N: XXSJ-10-G6A-35H-K4

This high data rate 4X28Gbps NRZ/4X56Gbps PAM-4 photodiode chip is GaAs top- illuminated 1x4 Array PIN structure. Features is high responsibility, low capacitance and low dark current, active area size is Φ35μm, signal and both ground bond pad are design on chip’s top for easy wire-bond, application in 850nm 4X28Gbps/4X56Gbps PAM-4 short-range data optical communication.