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Φ2000μm Coplanar Electrode Monitor PD Chip

P/N: XSJ-10-M-2000-CE

This top-illuminated InGaAs/InP monitor PIN photodiode chip with large active area, which is mesa structure, anode bond pad and cathode bond pad on front. Active area size is Φ2000μm, and high responsivity in the wavelength region from 910nm to 1650nm. Application to monitoring the optical power output from the back facet of various LD.

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Description

Features

  1. Mesa structure on SI. InP substrate.
  2. Φ2000μm active area.
  3. High responsibility.
  4. Low dark current.
  5. Low operating bias voltage.
  6. Anode and cathode on top, wire bond on front.
  7. -40℃ to 85℃ operation range.
  8. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
  9. 100% testing and inspection.
  10. Customized chip dimension is available.

Applications

  1. Back facet laser power monitoring.

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