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Φ300μm Bottom-illuminated Monitor PD Chip

P/N: XSJ-10-M-300-KB

This InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure with anode and cathode on top, incident surface on back. With bottom-illuminated active area size is Φ300μm, and high responsivity in the wavelength region from 980nm to 1620nm.Mainly application in monitoring the optical power.

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Description

Features

  1. Planar structure on SI InP substrate.
  2. Bottom-illuminated: Φ300μm active area.
  3. High responsibility and low dark current.
  4. Anode and cathode on top, wire bond on front.
  5. High ESD threshold: >500V.
  6. -40℃ to 85℃ operation range.
  7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
  8. 100% testing and inspection.
  9. Customized chip dimension is available.

Applications

  1. Monitoring the optical power

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